Effects of Nb concentration on photo-electrical properties of Sr/sub 1-x/La/sub x/Nb/sub y/Ti/sub 1-y/O/sub 3/ thin-film resistor

Abstract

Strontium lanthanum titanate-niobate (SrLaNb/sub x/Ti/sub 1-x/O/sub 3/) thin-film resistors are fabricated on SiO/sub 2//Si substrates by an argon ion-beam sputtering technique. Measurements show that the thin-film resistor has superior sensitivity for visible light. Moreover, the effects of Nb concentration on the photo-electrical properties of Sr/sub 1-x/La/sub x/Nb/sub y/Ti/sub 1-y/O/sub 3/ thin-film resistors and frequency effects on the photosensitivity performance are extensively investigated.