Low bias voltage tunable phase shifter based on inkjet-printed BST MIM varactors for C/X-band phased arrays

2015 European Microwave Conference (EuMC) Pub Date : 2015-12-03 DOI:10.1109/EUMIC.2015.7345157

M. Nikfalazar, A. Mehmood, M. Sohrabi, A. Wiens, Y. Zheng, H. Maune, R. Jakoby, M. Mikolajek, A. Friederich, C. Kohler, J. Binder

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引用次数: 4

Abstract

This paper presents a novel topology and method for the fabrication of tunable ferroelectric components based on inkjet printing for phased arrays applications at C/X-Band. This method enables low voltage biased tunable phase shifters by inkjet printing of tunable dielectric thick films. The loaded line tunable phase shifter is tuned by integrated metal-insulator-metal (MIM) varactors. The MIM varactors are fabricated by photo lithography and subsequently inkjet printing of barium-strontium-titanate striplines, enabling a simple and reliable process. In comparison to coplanar capacitors, such MIM varactors require significantly lower DC-voltage for tuning. A tunability of 32 % at 8.5 GHz is achieved by applying only 25 V across a 1.2 μm thick BST film and a tunability of 46 % by applying 50 V. The 11 unit cells loaded line tunable phase shifter achieves a figure of merit (FoM) above 40 °/dB across 7 to 8.5 GHz by applying maximum 50 V tuning voltage. The size of the phase shifter is 1×0.45 cm2.

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C/ x波段相控阵用喷墨打印BST MIM变容器的低偏置电压可调移相器

本文提出了一种基于C/ x波段相控阵喷墨打印的可调谐铁电元件的新拓扑结构和制造方法。该方法通过喷墨打印可调谐介质厚膜，实现了低电压偏置可调谐移相器。负载线可调谐移相器采用金属-绝缘子-金属(MIM)集成变容器进行调谐。MIM变容管是通过光刻和随后的钛酸钡锶条纹喷墨打印制造的，使工艺简单可靠。与共面电容器相比，这种MIM变容管需要明显较低的直流电压进行调谐。在1.2 μm厚的BST薄膜上仅施加25 V，在8.5 GHz下可调谐性为32%，施加50 V可调谐性为46%。11单元负载线可调谐移相器通过施加最大50 V调谐电压，在7至8.5 GHz范围内实现了40°/dB以上的优值(FoM)。移相器的尺寸为1×0.45 cm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2015 European Microwave Conference (EuMC)

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