A 12b 200MS/s frequency scalable zero-crossing based pipelined ADC in 55nm CMOS

Soon-Kyun Shin, J. Rudell, D. Daly, C. Muñoz, D. Chang, K. Gulati, Hae-Seung Lee, M. Straayer
{"title":"A 12b 200MS/s frequency scalable zero-crossing based pipelined ADC in 55nm CMOS","authors":"Soon-Kyun Shin, J. Rudell, D. Daly, C. Muñoz, D. Chang, K. Gulati, Hae-Seung Lee, M. Straayer","doi":"10.1109/CICC.2012.6330697","DOIUrl":null,"url":null,"abstract":"A 12-bit 200MS/s zero-crossing based pipeline ADC is presented. A coarse phase followed by a level-shifted fine phase is employed for higher accuracy. To enable high frequency operation, sub-ADC flash comparators are strobed immediately after the coarse phase. The ADC occupies 0.276mm2 in 55nm CMOS and dissipates 28.5mW. 62.5dB SNDR and 78.6dBc SFDR with a 99.6MHz input signal at 200MS/s are achieved for a FOM of 131fJ/step. The reference buffer, bias circuitry, and digital error correction circuits are all implemented on chip.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2012.6330697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

A 12-bit 200MS/s zero-crossing based pipeline ADC is presented. A coarse phase followed by a level-shifted fine phase is employed for higher accuracy. To enable high frequency operation, sub-ADC flash comparators are strobed immediately after the coarse phase. The ADC occupies 0.276mm2 in 55nm CMOS and dissipates 28.5mW. 62.5dB SNDR and 78.6dBc SFDR with a 99.6MHz input signal at 200MS/s are achieved for a FOM of 131fJ/step. The reference buffer, bias circuitry, and digital error correction circuits are all implemented on chip.
基于55nm CMOS的12b 200MS/s频率可扩展过零流水线ADC
提出了一种基于12位200MS/s过零的流水线ADC。为了获得更高的精度,采用了粗相后接电平移的细相。为了实现高频操作,子adc闪光比较器在粗相后立即进行频闪。ADC在55nm CMOS中占地0.276mm2,功耗28.5mW。在131fJ/step的FOM下,在200MS/s的99.6MHz输入信号下实现了62.5dB SNDR和78.6dBc SFDR。参考缓冲器、偏置电路和数字纠错电路均在芯片上实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信