A comparison between N-type and P-type InP LHL IMPATT diodes

E. El-Badawy, S. H. Ibrahim, H. El-Motaafy
{"title":"A comparison between N-type and P-type InP LHL IMPATT diodes","authors":"E. El-Badawy, S. H. Ibrahim, H. El-Motaafy","doi":"10.1109/ANTEM.2000.7851663","DOIUrl":null,"url":null,"abstract":"This paper presents a comparison between the performance of N- and P-type InP IMPATT diodes. This is important to deeply understand the operation of these devices. For the P-type diodes, it is found that the operation is always according to the conventional IMPATT mode. The depletion-layer-width modulation is the main factor responsible for the lower efficiency. This effect causes the induced current to undergo a dip at the worst time in the cycle and delays the extraction of the carriers. It is indicated that the velocity-field characteristic of N-type InP material is the main factor responsible for the high-efficiency operation of N-type IMPATTs. During this high-efficiency operation, the avalanche-generated packet of electrons is bunched and accelerated. It may also be prematurely collected. This causes the induced current to have one or two additional peaks at the proper phase angles in the RF cycle.","PeriodicalId":416991,"journal":{"name":"Symposium on Antenna Technology and Applied Electromagnetics [ANTEM 2000]","volume":"209 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium on Antenna Technology and Applied Electromagnetics [ANTEM 2000]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ANTEM.2000.7851663","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This paper presents a comparison between the performance of N- and P-type InP IMPATT diodes. This is important to deeply understand the operation of these devices. For the P-type diodes, it is found that the operation is always according to the conventional IMPATT mode. The depletion-layer-width modulation is the main factor responsible for the lower efficiency. This effect causes the induced current to undergo a dip at the worst time in the cycle and delays the extraction of the carriers. It is indicated that the velocity-field characteristic of N-type InP material is the main factor responsible for the high-efficiency operation of N-type IMPATTs. During this high-efficiency operation, the avalanche-generated packet of electrons is bunched and accelerated. It may also be prematurely collected. This causes the induced current to have one or two additional peaks at the proper phase angles in the RF cycle.
n型和p型InP LHL impat二极管的比较
本文比较了N型和p型InP impt二极管的性能。这对于深入了解这些设备的操作非常重要。对于p型二极管,我们发现它总是按照传统的IMPATT模式工作。耗尽层宽调制是导致效率降低的主要因素。这种效应导致感应电流在周期中最坏的时刻经历一个下降,并延迟载流子的提取。结果表明,n型InP材料的速度场特性是n型IMPATTs高效运行的主要因素。在这种高效率的操作中,雪崩产生的电子包被聚集和加速。它也可能被过早地收集。这导致感应电流在射频周期中在适当的相位角处有一个或两个额外的峰值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信