A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

Abstract

A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g. base stations will be demonstrated. The LNA is designed for the 1.92–1.98GHz band and reaches a 0.7dB NF at 27°C and 1.1 at 65°C. The output IP3 is +40dBm at 27°C and +37dBm at 65°C while having input and output return loss better than 20dB. A bypass mode and variable attenuation is also provided to cope with large input signals. The two-die MMIC is packaged on a single laminate. The total solution consumes a maximum of 197mA from a 5V supply.