Transient temperature measurement of microwave devices

Abstract

Decreased feature sizes with today's advanced microwave devices has led to increased functionality and decreasing chip sizes. Not only higher power density but also localized hotspots have become a significant concern for transistor performance and long term reliability. Arrhenius's law in chemical reaction dominates the reliability of highly doped semiconductors designed for higher switching speeds. With higher integration, the device features are significantly small such as a 100 nm line width line for a transistor gate electrode. As the dimensions decrease, the thermal time constant decreases simultaneously. Hence, it is major challenge to detect and measure hotspot temperatures.