Anisotropy of current-voltage characteristics in PbSnTe:In film structures

2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI:10.1109/EDM.2009.5173945

V. S. Epov, A. Klimov, V. Shumsky

引用次数: 0

Abstract

In the present work, we propose a model to describe the anisotropy of current-voltage characteristics in PbSnTe:In films at low temperatures under electron injection out of contacts. The model is developed considering the ferroelectric properties of PbSnTe:In. Data on the temperature dependence of the anisotropy are reported.

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薄膜结构中PbSnTe电流-电压特性的各向异性

在本工作中，我们提出了一个模型来描述低温下电子注入下PbSnTe:In薄膜的电流-电压特性的各向异性。该模型考虑了PbSnTe:In的铁电性质。报道了各向异性的温度依赖性数据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices

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