Competing technologies for ultrahigh-speed SRAMs and their applications

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1986.1156934

F. Lee

引用次数: 0

Abstract

Advanced MOS and bipolar technologies, using1-2μm lithography, have increased dramatically the complexity of 16K to 256K SRAMs and reduced access time to 3 to 30ns, respectively. Meanwhile, GaAs technology has produced 1 to 3ns, and 1K to 4K SRAMs. The present status and the future projections of these competing technologies will be discussed. The user's point-of-view assessing implementation of high speed SRAMS in a system environment will be offered.

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超高速ram的竞争技术及其应用

采用1-2μm光刻技术的先进MOS和双极技术，极大地提高了16K至256K ram的复杂性，并将访问时间分别缩短至3至30ns。同时，GaAs技术已经生产出1 ~ 3ns、1K ~ 4K ram。将讨论这些相互竞争的技术的现状和未来的预测。用户的观点评估高速sram在系统环境中的实现将提供。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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