GaAs heterojunction bipolar 1K gate array

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1984.1156638

Hen Yuan, W. Mclevige, Hung Shih, A. Hearn

引用次数: 12

Abstract

This report will discuss the design, fabrication and performance of a 1K heterojunction I2L gate array with a base bar size of 3.55 × 3.80mm2, containing 1024 internal gates, 64 programmable I/O buffers and 8 pads for the power supply. For general circuit applications the layout provides 300 global wire channels: 150 each in the horizontal and vertical directions.

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GaAs异质结双极1K栅极阵列

本报告将讨论一个1K异质结I2L栅极阵列的设计、制造和性能，其基栅尺寸为3.55 × 3.80mm2，包含1024个内部栅极，64个可编程I/O缓冲区和8个电源衬垫。对于一般电路应用，布局提供300个全局线通道:水平和垂直方向各150个。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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