A 10-Gb/s CMOS fully integrated ILO-based CDR

O. Mazouffre, B. Goumballa, M. Pignol, C. Neveu, Y. Deval, J. Bégueret
{"title":"A 10-Gb/s CMOS fully integrated ILO-based CDR","authors":"O. Mazouffre, B. Goumballa, M. Pignol, C. Neveu, Y. Deval, J. Bégueret","doi":"10.1109/ESSCIRC.2007.4430356","DOIUrl":null,"url":null,"abstract":"A CDR circuit dedicated to satellite embedded data link is presented. This circuit combines an injection locked oscillator, with a phase alignment circuit, to achieve the clock recovery. The circuit was designed in a 130 nm CMOS process from STMicroelectronics. The working range is from 9.6 Gbit/s up to 10.2 Gbit/s, the power dissipation is 94 mW under 1.2 V power supply. The measured eye opening is 60 ps and 240 mV with a BER lower than 1012.","PeriodicalId":121828,"journal":{"name":"ESSCIRC 2007 - 33rd European Solid-State Circuits Conference","volume":"11 12","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2007 - 33rd European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2007.4430356","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

A CDR circuit dedicated to satellite embedded data link is presented. This circuit combines an injection locked oscillator, with a phase alignment circuit, to achieve the clock recovery. The circuit was designed in a 130 nm CMOS process from STMicroelectronics. The working range is from 9.6 Gbit/s up to 10.2 Gbit/s, the power dissipation is 94 mW under 1.2 V power supply. The measured eye opening is 60 ps and 240 mV with a BER lower than 1012.
10gb /s CMOS完全集成基于ilo的CDR
提出了一种卫星嵌入式数据链专用的CDR电路。该电路结合了注入锁定振荡器和相位校准电路来实现时钟恢复。该电路采用意法半导体的130纳米CMOS工艺设计。工作范围为9.6 Gbit/s ~ 10.2 Gbit/s, 1.2 V电源下功耗为94mw。测得的开眼率为60ps和240mv,误码率低于1012。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信