A 50-nm 1.2-V GexTe1−x/Sb2Te3 superlattice topological-switching random-access memory (TRAM)

Abstract

A 50nm topological-switching random-access memory (TRAM) was fabricated for the first time. A high-quality Ge_xTe_1-x/Sb₂Te₃ superlattice film enabled set and reset voltages of TRAM to be less than 40% of those of PRAM. Statistical analysis of 16kb data showed the reset voltage to be less than 1.2 V, the lowest as a TRAM test chip.