{"title":"Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition","authors":"C. Jin, Xiaofeng Wu, L. Zhuge","doi":"10.1155/2008/760650","DOIUrl":null,"url":null,"abstract":"Silicon carbide (SiC) films were prepared by single and dual-ion-beam sputtering deposition at room temperature. An assisted Ar","PeriodicalId":229171,"journal":{"name":"Research Letters in Physical Chemistry","volume":"26 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Research Letters in Physical Chemistry","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2008/760650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Silicon carbide (SiC) films were prepared by single and dual-ion-beam sputtering deposition at room temperature. An assisted Ar
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