Fully-integrated WCDMA direct conversion SiGeC BiCMOS receiver

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365759

P. Garcia, B. Pellat, J. Blanc, P. Persechini, V. Knopik, L. Baud, F. Goussin, D. Thevenet, S. Majcherczak, F. Reaute, O. Richard, P. Conti, B. Szelag, D. Belot

引用次数: 3

Abstract

This paper describes a WCDMA direct conversion receiver which has been integrated in a BiCMOS SiGe-carbon process featuring 0.25 /spl mu/m/f/sub T/=60 GHz bipolar transistors. This receiver includes an integrated RF-front-end with local oscillator quadrature generator, 5/sup th/ order Butterworth analog baseband lowpass filter (LPF) and variable gain amplifier (VGA), cut-off frequency calibrator, DAC for DC-offset calibration, serial bus interface and voltage and current reference generators. In the high/low gain modes, this device consumes 25 mA and 20 mA respectively with 2.7 V power supply. The die is wire bonded directly on the validation board. Within the receive band, the measurements show 51 dB of overall gain, NF=5 dB, IIP3= -9 dBm, ICP1 = -15dBm.

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全集成WCDMA直接转换SiGeC BiCMOS接收机

本文介绍了一种采用0.25 /spl mu/m/f/sub /=60 GHz双极晶体管集成在BiCMOS SiGe-carbon工艺中的WCDMA直接转换接收机。该接收器包括一个集成的rf前端，带有本地振荡器正交发生器，5/sup / order巴特沃斯模拟基带低通滤波器(LPF)和可变增益放大器(VGA)，截止频率校准器，用于直流偏置校准的DAC，串行总线接口以及电压和电流参考发生器。在高/低增益模式下，该器件在2.7 V电源下分别消耗25 mA和20 mA。模具是直接焊在验证板上的。在接收频段内，测量结果显示总增益为51 dB, NF=5 dB, IIP3= -9 dBm, ICP1 = -15dBm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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