A highly integrated multiband LTE SiGe power amplifier for envelope tracking

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2015-05-17 DOI:10.1109/RFIC.2015.7337722

Yan Li, J. Ortiz, E. Spears

引用次数: 18

Abstract

This paper presents a highly integrated SiGe power amplifier (PA) for multiband long-term evolution (LTE). Two different harmonic loadings are investigated for the PA to achieve the optimized efficiencies for the envelope tracking (ET) and average power tracking (APT), respectively. By adopting the proper PA structure, our ET PA delivers >39% overall power-added efficiency (PAE) at the maximum output power (Pout) of 26.5 dBm with ACLREUTRA below -42 dB and EVM below 1% for the LTE QPSK 10 MHz at 699-716 MHz, 824-915 MHz and 1710-1980 MHz. At the back-off more than 5 dB below the maximum Pout, the ET PA is reconfigured to APT for remaining high overall PAE and linearity across a broad Pout range.

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用于包络跟踪的高集成多频带LTE SiGe功率放大器

提出了一种用于多频段长期演进(LTE)的高集成度SiGe功率放大器。为了分别实现包络跟踪(ET)和平均功率跟踪(APT)的优化效率，研究了两种不同的谐波负载。通过采用适当的PA结构，我们的ET PA在最大输出功率(Pout)为26.5 dBm时提供>39%的总功率增加效率(PAE)， ACLREUTRA低于-42 dB, EVM低于1%，适用于LTE QPSK 10 MHz, 699-716 MHz, 824-915 MHz和1710-1980 MHz。在最大输出小于5db时，ET PA被重新配置为APT，以保持高整体PAE和宽输出范围内的线性度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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