History, condition and tendencies of development concerning subject of active microwave devices in CNIRTI

Abstract

In this paper, we see further development of subjects in foundation and development of the independent departments engaged in high-frequency subjects. Development of local oscillator systems on the basis of microwave diodes had carried out widely. Bipolar transistor oscillators with electric frequency tuning from 100 MHz up to 5 GHz had been developed. For higher frequencies from 5 GHz up to 11 GHz the series of Gunn oscillators had been developed. To provide required level of microwave component parameters technological reconstruction had been carried out in CNIRTI. Nowadays a number of wideband components (power amplifiers up to 20 W, T/R modules, frequency converters, switching matrix, etc.) have been developed and produced for octave and ultra-octave bands up to 18 GHz by CNIRTI.