{"title":"Evolution of charge distributions in polymers during annealing","authors":"G. Sessler, G. Yang","doi":"10.1109/ISE.1996.578063","DOIUrl":null,"url":null,"abstract":"Polymer films of polyfluoroethylenepropylene (FEP) and polyimide (PI) of 25 /spl mu/m thickness are charged with monoenergetic electron beams of a range smaller than the sample thickness. Thereafter, the charge distribution in the thickness direction and its change with time at an annealing temperature of 120/spl deg/C are measured with the laser-induced pressure-pulse (LIPP) method. The experimental data are analyzed with a model of charge buildup during electron-beam irradiation and charge transport during annealing. The model takes into consideration the charge deposition and dose profiles, the radiation-induced conductivity, the carrier mobility, trapping time and maximum trap density. Evaluation of the data yields values of the mobility-lifetime product and shows that retrapping is fast in FEP and slow in PI in the temperature range considered.","PeriodicalId":425004,"journal":{"name":"9th International Symposium on Electrets (ISE 9) Proceedings","volume":"112 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Symposium on Electrets (ISE 9) Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISE.1996.578063","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
Polymer films of polyfluoroethylenepropylene (FEP) and polyimide (PI) of 25 /spl mu/m thickness are charged with monoenergetic electron beams of a range smaller than the sample thickness. Thereafter, the charge distribution in the thickness direction and its change with time at an annealing temperature of 120/spl deg/C are measured with the laser-induced pressure-pulse (LIPP) method. The experimental data are analyzed with a model of charge buildup during electron-beam irradiation and charge transport during annealing. The model takes into consideration the charge deposition and dose profiles, the radiation-induced conductivity, the carrier mobility, trapping time and maximum trap density. Evaluation of the data yields values of the mobility-lifetime product and shows that retrapping is fast in FEP and slow in PI in the temperature range considered.