Modeling on increase of n-p-n and p-n-p current gain by hydrogen electromigration in polysilicon emitters

Abstract

A unified analytical model that relates the increase of current gain to forward current stress is presented for both poly emitter n-p-n and p-n-p transistors. This model is based on electromigration of atomic hydrogen and its subsequent passivation of dangling bonds at polysilicon grain boundaries and poly/mono-silicon interface. The comparison between experiment and simulation results is also presented.<>