An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs

S. Balanethiram, A. Chakravorty, R. D’Esposito, S. Frégonèse, T. Zimmer
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引用次数: 9

Abstract

In this paper we present an improved self-consistent iterative model for thermal resistance in SiGe HBTs. The proposed model evaluates both the upward and downward heat dissipation from the heat source located at the base-collector junction. Along with the temperature dependency, thermal conductivity degradation due to heavy doping and Ge composition in the base region is included in the proposed model. It is observed that the model accuracy is improved once these physical effects are included along with the upward heat diffusion. Scalability of the proposed model is validated with the measured data for different emitter geometries.
一种改进的可扩展自洽迭代SiGe HBTs热阻模型
本文提出了一种改进的SiGe高温超导热阻自洽迭代模型。所提出的模型评估了位于基底-集热器连接处的热源的向上和向下散热。除了温度依赖性外,由于重掺杂和基区Ge成分导致的导热性能下降也包括在所提出的模型中。结果表明,将这些物理效应与向上的热扩散一并考虑,可以提高模型的精度。用不同发射体几何形状的实测数据验证了该模型的可扩展性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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