{"title":"A new 4.3 ppm//spl deg/C voltage reference using standard CMOS process with 1V supply voltage","authors":"Q. X. Zhang, L. Siek","doi":"10.1109/ISCAS.2005.1465569","DOIUrl":null,"url":null,"abstract":"A new 1 V supply voltage reference, using a standard CMOS process, with threshold voltage close to the supply voltage is proposed. The threshold voltages of NMOS and PMOS are 0.81 V and -1.05 V respectively at a temperature of -25/spl deg/C. Simulation results show that the proposed design can achieve below 4.3 ppm//spl deg/C between -25/spl deg/C and 150/spl deg/C at supply voltage of 1 V; as the supply voltage increases to 2 V, the temperature coefficient only increases to 9.3 ppm//spl deg/C.","PeriodicalId":191200,"journal":{"name":"2005 IEEE International Symposium on Circuits and Systems","volume":"139 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2005.1465569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A new 1 V supply voltage reference, using a standard CMOS process, with threshold voltage close to the supply voltage is proposed. The threshold voltages of NMOS and PMOS are 0.81 V and -1.05 V respectively at a temperature of -25/spl deg/C. Simulation results show that the proposed design can achieve below 4.3 ppm//spl deg/C between -25/spl deg/C and 150/spl deg/C at supply voltage of 1 V; as the supply voltage increases to 2 V, the temperature coefficient only increases to 9.3 ppm//spl deg/C.