A new 4.3 ppm//spl deg/C voltage reference using standard CMOS process with 1V supply voltage

Q. X. Zhang, L. Siek
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引用次数: 7

Abstract

A new 1 V supply voltage reference, using a standard CMOS process, with threshold voltage close to the supply voltage is proposed. The threshold voltages of NMOS and PMOS are 0.81 V and -1.05 V respectively at a temperature of -25/spl deg/C. Simulation results show that the proposed design can achieve below 4.3 ppm//spl deg/C between -25/spl deg/C and 150/spl deg/C at supply voltage of 1 V; as the supply voltage increases to 2 V, the temperature coefficient only increases to 9.3 ppm//spl deg/C.
新的4.3 ppm//spl度/C基准电压,采用标准CMOS工艺,电源电压为1V
提出了一种新的1 V电源基准电压,采用标准CMOS工艺,阈值电压接近电源电压。温度为-25℃时,NMOS和PMOS的阈值电压分别为0.81 V和-1.05 V。仿真结果表明,在电源电压为1v时,该设计在-25 ~ 150/spl°C范围内可达到低于4.3 ppm//spl°C;当电源电压增加到2 V时,温度系数仅增加到9.3 ppm//spl°/C。
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