Current Source Gate Driver for Series Connected Silicon-Carbide (SiC) MOSFETs

Abstract

SiC MOSFET has superior switching performance over Si IGBT in terms of power loss and temperature characteristics. In order to significantly improve the efficiency and power density of medium voltage drive and high-power converters. In this paper, series connected SiC MOSFETs are used to replace the high voltage Si IGBT. Specifically, a game changing and universally applicable standard block of "series connected SiC MOSFETs" with excellent dynamic voltage sharing and high reliability is proposed. The core technology in the block is the current source gate driver with device synchronization function.