A wideband fractional-N synthesizer with low effort adaptive phase noise cancellation for low-power short-range standards

Ye Zhang, Jan Henning Mueller, B. Mohr, Lei Liao, A. Atac, R. Wunderlich, S. Heinen
{"title":"A wideband fractional-N synthesizer with low effort adaptive phase noise cancellation for low-power short-range standards","authors":"Ye Zhang, Jan Henning Mueller, B. Mohr, Lei Liao, A. Atac, R. Wunderlich, S. Heinen","doi":"10.1109/RFIC.2015.7337707","DOIUrl":null,"url":null,"abstract":"This paper presents a wideband low-spur fractional-N synthesizer with an adaptive noise cancellation technique. By adopting the classical loop filter, the ΣΔ quantization noise as well as the spurs are compensated with simple calibration circuits. The synthesizer is fully integrated in 130nm CMOS technology, consuming 0.33mm2 area and 8.3mW core power. It operates at 1.8 GHz carrier frequency with 1MHz bandwidth. The out-band phase noise is -129 dBc/Hz at 3MHz offset, the reference spur is -68 dBc, and the worst inband fractional spur is -56 dBc.","PeriodicalId":121490,"journal":{"name":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"14 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2015.7337707","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

This paper presents a wideband low-spur fractional-N synthesizer with an adaptive noise cancellation technique. By adopting the classical loop filter, the ΣΔ quantization noise as well as the spurs are compensated with simple calibration circuits. The synthesizer is fully integrated in 130nm CMOS technology, consuming 0.33mm2 area and 8.3mW core power. It operates at 1.8 GHz carrier frequency with 1MHz bandwidth. The out-band phase noise is -129 dBc/Hz at 3MHz offset, the reference spur is -68 dBc, and the worst inband fractional spur is -56 dBc.
一种适用于低功率短距离标准的低功耗自适应相位噪声消除的宽带分数n合成器
本文提出了一种采用自适应消噪技术的宽带低杂散分数n合成器。采用经典环路滤波器,通过简单的校准电路补偿ΣΔ量化噪声和杂散。该合成器完全集成130nm CMOS技术,占地0.33mm2,核心功率8.3mW。它工作在1.8 GHz载波频率和1MHz带宽。在3MHz偏移时,带外相位噪声为-129 dBc/Hz,参考杂散为-68 dBc,带内最差分数杂散为-56 dBc。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信