{"title":"Signal processing electronics for a capacitive microsensor","authors":"G. Amendola, G. Lu","doi":"10.1117/12.382282","DOIUrl":null,"url":null,"abstract":"An interface circuit in a 0.8-micrometers CMOS process for the on- chip integration of a capacitive micro-sensor used as a microphone is presented. In order to circumvent 1/f noise contributions and to improve the signal/noise ratio, a synchronous modulation-demodulation technique has been applied. For the implementation of this technique, we have studied and designed several functional block, such as modulator with signal conversion, low-noise amplifier, demodulator, etc. To deal with problems related to dispersion of intrinsic capacitance of the sensor, a feedback compensating solution is suggested. The designed circuit has a sensibility of 1200 V/pF, with a minimum detectable capacitance variation of 2 10-6 pF.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"82 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Design, Test, Integration, and Packaging of MEMS/MOEMS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.382282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
An interface circuit in a 0.8-micrometers CMOS process for the on- chip integration of a capacitive micro-sensor used as a microphone is presented. In order to circumvent 1/f noise contributions and to improve the signal/noise ratio, a synchronous modulation-demodulation technique has been applied. For the implementation of this technique, we have studied and designed several functional block, such as modulator with signal conversion, low-noise amplifier, demodulator, etc. To deal with problems related to dispersion of intrinsic capacitance of the sensor, a feedback compensating solution is suggested. The designed circuit has a sensibility of 1200 V/pF, with a minimum detectable capacitance variation of 2 10-6 pF.