Influence of trapped charges on low-level leakage current in thin silicon dioxide films

Abstract

In this work, experiments were designed to examine the influence of the trapped charges on SILC in thin SiO/sub 2/ films. It is shown that the release of the trapped electrons in the gate/oxide interface region during the I-V measurement could be responsible for the negative-differential-resistance current at low fields. It is also shown that the positive trapped charges could enhance the DC component of the SILC.