Voltage CMOS Quaternary Gates for Digital Designs

Milton E. R. Romero, E. M. Martins, D. C. A. Arigoni, A. D. M. Nogueira, M. E. D. Gonzalez
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Abstract

To take advantage of the Multiple Valued Logic, with domain: {0, 1,…, N – 1}, where N is the a base of representation, set of integrated circuits (IC) that implement the MVL operators is needed. In the IC implementation, it is necessary to minimize the number of transistors to improve area utilization and power consumption, among other advantages. This work proposes an implementation of gates: eAND3, eAND2, eAND1, Successor, and MAX, with only 14, 28, 6, 26, and 3 MOS transistors, using Austriamicrosystems 0.35µm technology; such that, the number of transistors utilized in the proposed implementation is lower than the number of transistors for equivalent gates reported in literature. The inverted threshold voltage measured have changed 30% in different process variation corners (models cmostm, cmoswp, cmosws) nevertheless, the simulations demonstrate correct behavior for all gates.
用于数字设计的电压CMOS四元门
为了利用多值逻辑,在域为{0,1,…,N - 1},其中N为表示的基时,需要一组实现MVL算子的集成电路(IC)。在集成电路的实现中,有必要尽量减少晶体管的数量,以提高面积利用率和功耗,以及其他优势。这项工作提出了一个栅极的实现:eAND3, eAND2, eAND1,后继和MAX,只有14个,28个,6个,26个和3个MOS晶体管,使用奥地利微系统0.35µm技术;因此,所提出的实现中使用的晶体管数量低于文献中报道的等效门的晶体管数量。在不同的工艺变化角(模型cgm, cmoswp, cmosws),测量的反向阈值电压变化了30%,但仿真结果表明所有门的行为都是正确的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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