A compact SPICE model for bipolar resistive switching memory

Kaiwen Hsu, Wei-Wen Ding, M. Chiang
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引用次数: 5

Abstract

In this paper, we successfully develop a compact model for bipolar resistive switching memory using Verilog-A. Fundamental I-V characteristics of RRAM are physically and yet simply represented by this model. Since the Verilog-A modeling is flexible and portable for many circuit simulators, the proposed modeling technique can be widely used.
用于双极电阻开关存储器的紧凑SPICE模型
在本文中,我们成功地开发了一个紧凑的模型,双极电阻开关存储器使用Verilog-A。RRAM的基本I-V特性是物理的,但简单地用这个模型表示。由于Verilog-A建模对许多电路模拟器具有灵活性和可移植性,因此所提出的建模技术可以广泛应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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