A Ka-Band GaAs Power MMIC

Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1985-06-01 DOI:10.1109/MCS.1985.1113632

M. Kobiki, Y. Mitsui, Y. Sasaki, M. Komaru, K. Seino, T. Takagi

引用次数: 20

Abstract

A Ka-band GaAs power MMIC with source island via-hole PHS structure and monolithic power divider /combiner circuits was developed and reliability study was performed. This source island via-hole technique successfully reduced both thermal resistance and source parasitic inductance of the MMIC. The 3200 µm MMIC gave power output at 1dB gain compression of 1.1 W, linear power gain of 4.0 dB and power added efficiency of 10.8 % at 28 GHz. No failure was observed in the temperature cycling, the DC running and the high temperature storage tests.

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研制了一种具有源岛式过孔小灵通结构和单片分/合闸电路的ka波段GaAs功率MMIC，并进行了可靠性研究。这种源岛过孔技术成功地降低了MMIC的热阻和源寄生电感。3200µm MMIC在1dB增益压缩时的输出功率为1.1 W，线性功率增益为4.0 dB, 28 GHz时的功率附加效率为10.8%。在温度循环、直流运行和高温储存试验中均未发现故障。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microwave and Millimeter-Wave Monolithic Circuits

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