Design of Dickson rectifier for RF energy harvesting in 28 nm FD-SOI technology

Abstract

In the context of the radio frequency energy harvesting, RF-DC converter based on a one stage Dickson voltage rectifier has been studied and realized in 28 nm FD-SOI technology. After the analysis of the operating constraints of the circuit, a choice was made on the N-low threshold voltage transistor (NLVT). Moreover, the back gate polarization (BGP) effect, on circuit performance, has been analyzed and a dynamic BGP is proposed which improve rectifier performance.