Investigation of conductive filament growth and rupture in ReRAM structures based on hafnium oxide

Abstract

Neuromorphic computing has been raised as an excellent alternative to conventional digital computing due to scaling limits and heat removal difficulties. At the same time, neuromorphic computing makes special memory requirements, such as high-speed, durability, compatibility with CMOS technology. ReRAM meets these requirements perfectly. Therefore, the goal of this work is to better understand the physics of growth and rupture of metal-like filament in ReRAM.