Realizing multimode of resistive switching in single Ag/SiO2/Pt device via tuning forming compliance current

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839677

Haitao Sun, Qi Liu, S. Long, H. Lv, Ming Liu

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Abstract

Coexistence of volatile threshold switching (TS) and nonvolatile memory switching (MS) behaviors are achieved in a single Ag/SiO2/Pt device. After positive forming with high compliance current (ICC), a conductive filament (CF) consisting of continuous Ag nanocrystals is formed in the device, and the device shows bipolar MS behavior under positive SET and negative RESET. After positive forming process with low ICC, a CF consisting of discrete Ag nanocrystals is formed. The device shows two types of resistive switching behaviors based on the subsequent operation condition. Under low ICC condition, the device shows symmetrical TS in the positive and negative voltage loops. Interesting, when removing the ICC, a unipolar MS with negative differential resistance (NDR) characteristic is observed under negative voltage loop. In addition, the unipolar MS shows good performances, including high uniformity, high reliability and multilevel storage potential.

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通过调整形成顺应电流，实现单Ag/SiO2/Pt器件的多模电阻开关

在单个Ag/SiO2/Pt器件中实现了易失性阈值开关(TS)和非易失性存储器开关(MS)行为的共存。高顺应电流(ICC)正成型后，在器件内形成由连续银纳米晶组成的导电丝(CF)，器件在正SET和负RESET下表现出双极性质谱行为。在低ICC的条件下，形成了由离散银纳米晶组成的CF。根据随后的工作条件，器件表现出两种类型的电阻开关行为。在低ICC条件下，器件在正、负电压回路中呈现对称TS。有趣的是，当去除ICC时，在负电压环下观察到具有负差分电阻(NDR)特性的单极质谱。单极质谱具有高均匀性、高可靠性和多级存储潜力等优点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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