Fine-Grained Fault Tolerance for Process Variation-Aware Caches

Tayyeb Mahmood, Soontae Kim
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引用次数: 10

Abstract

Continuous scaling in CMOS fabrication process makes circuits more vulnerable to process variations, which results in variable delay, malfunctioning, and/or leaky circuits. Caches are one of the biggest victims of process variations due to their large sizes and minimal cell features. To mitigate the impacts of process variations on caches, we propose to localize the effects of process variations at a word level, not at the conventional cache set, cache way, or cache line level. Faulty words are disabled or shut down completely and accesses to those words are bypassed to a small set of word-length buffers. This technique is shown to be effective in reducing performance penalty due to process variations and in increasing the parametric yield up to 90% when subjected to the performance constraints.
过程变化感知缓存的细粒度容错
CMOS制造过程中的连续缩放使电路更容易受到工艺变化的影响,从而导致可变延迟、故障和/或漏电电路。缓存是进程变化的最大受害者之一,因为它们的大小很大,单元特征很少。为了减轻进程变化对缓存的影响,我们建议将进程变化的影响定位在字级别,而不是传统的缓存集、缓存方式或缓存线级别。错误的单词被禁用或完全关闭,对这些单词的访问被绕过到一小组单词长度缓冲区。该技术被证明可以有效地减少由于工艺变化造成的性能损失,并在受到性能限制时将参数良率提高到90%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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