Optimization of post N/sub 2/ treatment & USG cap layer to improve tungsten peeling defects for deep sub-micron device yield improvement

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI:10.1109/ISSM.2000.993707

Y.L. Cheng, Y. Wang, S.A. Wu, H.L. Wang, J.K. Wang

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Abstract

Integration issue of W-plug peeling from fluorinated silica glass (FSG) in deep sub-micron IMD application was investigated in this study. Tungsten would peel off immediately during post CMP N/sub 2/ treatment in-situ running with USG cap layer deposition after W-plug deposition. Separating or optimizing post-CMP N/sub 2/ treatment and cap layer would solve this peeling issue. The key points of peeling were the bias power of N/sub 2/ treatment and initial USG cap temperature in the HDP-CVD chamber. TOF-SIMS analysis revealed that higher bias power and longer treatment time lead to more fluorine distribution on the USG cap layer surface, which may cause non-Si-F bonding fluorine to react with subsequent Ti/TiN/W metal layer. FTIR spectra also showed that low bias power, adding an extra cooling step before substantial in-situ cap layer deposition or ex-situ cap would increase fluorine stability in FSG/USG interface.

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优化后N/sub /处理和USG帽层，改善钨剥离缺陷，提高深亚微米器件良率

研究了氟化硅玻璃(FSG)在深亚微米IMD应用中w塞剥离的集成问题。在CMP N/ sub2 /处理后的原位运行过程中，钨会立即剥离，W-plug沉积后会沉积USG帽层。分离或优化后cmp N/ sub2 /处理和帽层将解决这一剥落问题。剥离的关键是N/ sub2 /处理的偏置功率和HDP-CVD室的初始USG帽温度。TOF-SIMS分析表明，较高的偏置功率和较长的处理时间导致USG帽层表面氟分布较多，这可能导致非si - f键合氟与后续Ti/TiN/W金属层发生反应。FTIR光谱还表明，低偏置功率，在大量原位盖层沉积或非原位盖层沉积之前增加额外的冷却步骤可以提高FSG/USG界面中氟的稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)

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