Effects of ion-implantation on light-emitting FeSi/sub 2/ shallow junction

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI:10.1109/IWJT.2004.1306844

L. Chou, H. Lu, L. Chen, J. Huang

引用次数: 0

Abstract

Effects of ion-implantation and substrate orientation on nanostructures and photoluminescence (PL) of the ultra-thin /spl beta/-FeSi/sub 2/ films were investigated. Ion-implantation was found to enhance the formation of /spl beta/-FeSi/sub 2/. PL characteristics were strongly affected by implantation species and substrate orientation. The strongest intensity of PL was observed in epitaxial /spl beta/-FeSi/sub 2/ ultra-thin films on BF/sub 2//sup +/-implanted (111)Si.

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离子注入对发光FeSi/sub - 2/浅结的影响

研究了离子注入和衬底取向对超薄/spl β /-FeSi/sub - 2/薄膜纳米结构和光致发光的影响。离子注入可促进/spl β /-FeSi/sub 2/的形成。注入物种类和底物取向对PL特性影响较大。在BF/sub - 2//sup +/-注入(111)Si的外延/spl β /-FeSi/sub - 2/超薄薄膜中观察到最强的PL强度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

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