{"title":"Calculation of the Shunt Resistance across the Absorber Layer of Hydrogenated Amorphous Silicon Photovoltaic Cells","authors":"A. Al Tarabsheh, Muhammad Akmal","doi":"10.1109/ICEEE2019.2019.00010","DOIUrl":null,"url":null,"abstract":"In contrast to the existing conventional models, that describe the shunt resistance of hydrogenated amorphous silicon as a uniform resistance a cross the absorber layer (i-layer), our paper calculates the shunt resistance of a-Si:H PV cells as a function of the location across the i-layer resulting in a more detailed description of the shunt resistance. The photo-generation of the electron-hole pairs depend the photons' wavelength values and the potential across the PV cell. The shunt resistance exists because of the current leakage between the front-and back-contact layers within the i-layer. The electric current of the electrons and holes is calculated, in this paper, by solving the Poisson, continuity, and transport equations at each location within the i-layer for wide range potential values. In this article, the contribution of electrons and holes on the shunt leakage is calculated for each carrier independently by separating the current density/voltage (J/V) curves of the electrons and of the holes at each location within the i-layer. This work proves that the effective value of the location-dependent shunt resistances due to the electrons and holes equals the effective shunt resistance of the PV cell calculated from the total J/V","PeriodicalId":407725,"journal":{"name":"2019 6th International Conference on Electrical and Electronics Engineering (ICEEE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 6th International Conference on Electrical and Electronics Engineering (ICEEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEEE2019.2019.00010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In contrast to the existing conventional models, that describe the shunt resistance of hydrogenated amorphous silicon as a uniform resistance a cross the absorber layer (i-layer), our paper calculates the shunt resistance of a-Si:H PV cells as a function of the location across the i-layer resulting in a more detailed description of the shunt resistance. The photo-generation of the electron-hole pairs depend the photons' wavelength values and the potential across the PV cell. The shunt resistance exists because of the current leakage between the front-and back-contact layers within the i-layer. The electric current of the electrons and holes is calculated, in this paper, by solving the Poisson, continuity, and transport equations at each location within the i-layer for wide range potential values. In this article, the contribution of electrons and holes on the shunt leakage is calculated for each carrier independently by separating the current density/voltage (J/V) curves of the electrons and of the holes at each location within the i-layer. This work proves that the effective value of the location-dependent shunt resistances due to the electrons and holes equals the effective shunt resistance of the PV cell calculated from the total J/V