Calculation of the Shunt Resistance across the Absorber Layer of Hydrogenated Amorphous Silicon Photovoltaic Cells

A. Al Tarabsheh, Muhammad Akmal
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引用次数: 1

Abstract

In contrast to the existing conventional models, that describe the shunt resistance of hydrogenated amorphous silicon as a uniform resistance a cross the absorber layer (i-layer), our paper calculates the shunt resistance of a-Si:H PV cells as a function of the location across the i-layer resulting in a more detailed description of the shunt resistance. The photo-generation of the electron-hole pairs depend the photons' wavelength values and the potential across the PV cell. The shunt resistance exists because of the current leakage between the front-and back-contact layers within the i-layer. The electric current of the electrons and holes is calculated, in this paper, by solving the Poisson, continuity, and transport equations at each location within the i-layer for wide range potential values. In this article, the contribution of electrons and holes on the shunt leakage is calculated for each carrier independently by separating the current density/voltage (J/V) curves of the electrons and of the holes at each location within the i-layer. This work proves that the effective value of the location-dependent shunt resistances due to the electrons and holes equals the effective shunt resistance of the PV cell calculated from the total J/V
氢化非晶硅光伏电池吸收层分流电阻的计算
现有的传统模型将氢化非晶硅的分流电阻描述为跨吸收层(i层)的均匀电阻,与之相反,我们的论文将a- si:H光伏电池的分流电阻计算为跨i层位置的函数,从而更详细地描述了分流电阻。电子-空穴对的光产生取决于光子的波长值和穿过PV电池的电势。并联电阻的存在是由于i层内前后接触层之间的漏电流。本文通过求解i层内各位置的泊松方程、连续性方程和输运方程来计算电子和空穴的电流。在本文中,通过分离i层内每个位置的电子和空穴的电流密度/电压(J/V)曲线,独立计算每个载流子的电子和空穴对分流泄漏的贡献。本工作证明了由电子和空穴引起的位置相关并联电阻的有效值等于由总J/V计算的PV电池的有效并联电阻
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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