Test as a key enabler for faster yield ramp-up

J. Segal, R. Segers, R. Aitken, S. Eichenberge, A. Gattike, M. Millegen, R. Seger, S. Venkataraman
{"title":"Test as a key enabler for faster yield ramp-up","authors":"J. Segal, R. Segers, R. Aitken, S. Eichenberge, A. Gattike, M. Millegen, R. Seger, S. Venkataraman","doi":"10.1109/VTS.2002.1011135","DOIUrl":null,"url":null,"abstract":"The successful introduction of a new IC manufacturing process requires a rapid yield ramp. In-line inspection, parameter evaluation using special tests structures and memory arrays are typically used to debug and diagnose a new process or product. However, not all the failure mechanisms can be anticipated and detected using such test structures and memory blocks. Logic structures have a different and irregular topology, which may lead to different defect sensitivities. Indeed, some of the (spot) defects may not occur in the test structures or memories and may then only be detected at the product’s final wafer test. Retest, precise electrical fault diagnosis methods and advanced (physical) failure analysis procedures are then needed to localize and characterize these types of failures.","PeriodicalId":237007,"journal":{"name":"Proceedings 20th IEEE VLSI Test Symposium (VTS 2002)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 20th IEEE VLSI Test Symposium (VTS 2002)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTS.2002.1011135","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The successful introduction of a new IC manufacturing process requires a rapid yield ramp. In-line inspection, parameter evaluation using special tests structures and memory arrays are typically used to debug and diagnose a new process or product. However, not all the failure mechanisms can be anticipated and detected using such test structures and memory blocks. Logic structures have a different and irregular topology, which may lead to different defect sensitivities. Indeed, some of the (spot) defects may not occur in the test structures or memories and may then only be detected at the product’s final wafer test. Retest, precise electrical fault diagnosis methods and advanced (physical) failure analysis procedures are then needed to localize and characterize these types of failures.
测试是快速提高产量的关键推动者
成功引入新的集成电路制造工艺需要快速的产量斜坡。使用特殊测试结构和存储阵列的在线检查、参数评估通常用于调试和诊断新工艺或产品。然而,并不是所有的故障机制都可以使用这样的测试结构和内存块来预测和检测。逻辑结构具有不同的和不规则的拓扑结构,这可能导致不同的缺陷灵敏度。事实上,一些(斑点)缺陷可能不会发生在测试结构或存储器中,然后可能只有在产品的最终晶圆测试中才能检测到。然后需要重新测试,精确的电气故障诊断方法和先进的(物理)故障分析程序来定位和表征这些类型的故障。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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