Evaluation of silicon-on-sapphire enhancement JFETs for digital applications

[1991] Proceedings. First Great Lakes Symposium on VLSI Pub Date : 1991-03-01 DOI:10.1109/GLSV.1991.143991

I. Talkhan, H. Abdel-Aty-Zohdy

引用次数: 1

Abstract

Complete theoretical analysis of SOS n-channel JFET inverter, based on the exact I-V relationship and taking into account the changes in the electron mobility, is presented. A program to implement the analysis is also presented. The simulated results as compared with nMOS inverters resulted in 2.65%, 20% and 80% improvements in the logic swing, pull-up time and power dissipation respectively. A nine-stage ring oscillator is used to rate the performance of the enhancement SOS JFETs for digital applications.<>

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用于数字应用的蓝宝石上硅增强jfet的评价

基于精确的I-V关系，考虑到电子迁移率的变化，对SOS n沟道JFET逆变器进行了完整的理论分析。并给出了实现该分析的程序。仿真结果表明，与nMOS逆变器相比，该逆变器的逻辑摆幅、上拉时间和功耗分别提高了2.65%、20%和80%。采用九级环形振荡器对数字应用中增强型SOS jfet的性能进行评价

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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[1991] Proceedings. First Great Lakes Symposium on VLSI

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