Ring oscillator reliability model to hardware correlation in 45nm SOI

C. Van Dam, M. Hauser
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引用次数: 3

Abstract

Accurate CMOS reliability simulations are required at the circuit design stage in order to predict product lifetime. The physical mechanisms that cause transistor performance to degrade depend on operating conditions (temperature, bias), scale and technology of their design, as well as how the devices are topologically interconnected, loaded, and switched. This study investigates reliability model to hardware correlation of Cu 45nm Silicon-On-Insulator (SOI) ring oscillators, variations of which are altogether typical of digital logic paths. The contributions from physical degradation mechanisms of Negative Bias Temperature Instability (NBTI) and Hot-Carrier Injection (HCI) were modeled in RelXpert to produce degraded Spectre netlists. Simulations were found to be within acceptable accuracy for estimating aging induced performance changes in hardware, quantitatively compared in terms of the %-difference in the time-slope of the power regression of frequency degradation, as well as in the actual %-frequency degradation as a function of time. The main contribution of this work is in the accurate prediction of the extent of the dominant component degradation mechanisms in what may be the smallest scale thin-oxide devices that will ever be fabricated in production, reflecting that the NBTI and HCI mechanisms are well understood across scale variation approaching the atomic limit.
45nm SOI环形振荡器可靠性模型与硬件相关
为了预测产品寿命,在电路设计阶段需要精确的CMOS可靠性仿真。导致晶体管性能下降的物理机制取决于操作条件(温度,偏置),其设计的规模和技术,以及器件如何在拓扑上互连,加载和切换。本文研究了铜45nm绝缘体上硅(SOI)环形振荡器的可靠性模型与硬件相关性,其变化完全是典型的数字逻辑路径。在RelXpert中对负偏置温度不稳定性(NBTI)和热载流子注入(HCI)的物理降解机制的贡献进行了建模,以产生降解的Spectre网络列表。在估计硬件老化引起的性能变化方面,模拟被发现在可接受的精度范围内,定量地比较了频率退化的功率回归的时间斜率的%差,以及作为时间函数的实际频率退化%。这项工作的主要贡献在于准确预测了可能在生产中制造的最小尺度薄氧化物器件中主导成分降解机制的程度,反映了NBTI和HCI机制在接近原子极限的尺度变化中得到了很好的理解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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