RUSM: Harnessing Unused Resources in 3D NAND SSD to Enhance Reading Performance

Hasan Alhasan, Yun-Chih Chen, Chien-Chung Ho, Tei-Wei Kuo
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Abstract

3D NAND flash-based storage devices, i.e., Solid-State Drives (SSDs), are gradually regarded as promising candidates to lead the flash industry thanks to their rapidly growing density. However, 3D NAND SSD has relatively high flash command latency, which raises the phenomenon of chip-blocking write, yielding the read long-tail latency problem. Data replication is a viable strategy for increasing data availability. However, data replication brings extra time overhead to read and write data, which reinforces the original chip-blocking write problem. We first reveal that the conventional scheme writes a whole page to flush smaller data portion, resulting into time squandering. Based on this observation, we propose a novel scheme, RUSM (Replicate Using Subpage Merging), which reclaims the improperly used time from the conventional page writing operation to amend the replication mechanism. Through experiments, we show how RUSM controls the chip-blocking write problem and enhances reading performance at low overhead cost.
利用3D NAND SSD中未使用的资源来提高读取性能
基于3D NAND闪存的存储设备,即固态硬盘(ssd),由于其快速增长的密度,逐渐被视为引领闪存产业的有希望的候选者。然而,3D NAND SSD具有较高的闪存命令延迟,这会引起芯片阻塞写入现象,从而产生读取长尾延迟问题。数据复制是提高数据可用性的可行策略。但是,数据复制给读写数据带来了额外的时间开销,从而加剧了原来的芯片阻塞写入问题。我们首先揭示,传统方案写整个页面来刷新较小的数据部分,导致时间浪费。基于这一观察,我们提出了一种新的方案,RUSM(使用子页面合并复制),它从传统的页面写入操作中回收不正确使用的时间来修改复制机制。通过实验,我们展示了RUSM如何在低开销成本下控制芯片阻塞写入问题并提高读取性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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