Full-band Monte Carlo simulation for metal-semiconductor contact with direct tunneling effect

Abstract

The metal-semiconductor contact including the quantum mechanical tunneling effect is simulated by the self-consistent ensemble Monte Carlo method. Two-dimension in real space is considered and irregular tetrahedron distribution is used in k-space. A variable G-scheme is used in the self-scattering method. The tunneling currents both under forward and reverse biases are investigated. The results indicate the tunneling effect is of great importance under reverse biases.