S. Trotta, B. Dehlink, A. Ghazinour, D. Morgan, J. John
{"title":"A 77GHz 3.3V 4-channel transceiver in SiGe BiCMOS technology","authors":"S. Trotta, B. Dehlink, A. Ghazinour, D. Morgan, J. John","doi":"10.1109/BIPOL.2009.5314247","DOIUrl":null,"url":null,"abstract":"We present a 77GHz four-channel transceiver for automotive radar applications designed in a 200GHz fT SiGe BiCMOS technology. The chip features a Tx-channel, a prescaler by 1536, and three Rx-channels. One of those Rx is in I/Q configuration. The Rx-channels show a typical conversion gain of 19dB while the NFssb is lower than 13dB at 100kHz. The VCO is based on a new topology which allows generating differential push-push outputs. It shows a tuning range larger than 8GHz. The phase noise is −74dBc/Hz at 100kHz offset. The output power is 9dBm. At a 3.3V supply, the chip consumes 533mA.","PeriodicalId":267364,"journal":{"name":"2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2009.5314247","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
We present a 77GHz four-channel transceiver for automotive radar applications designed in a 200GHz fT SiGe BiCMOS technology. The chip features a Tx-channel, a prescaler by 1536, and three Rx-channels. One of those Rx is in I/Q configuration. The Rx-channels show a typical conversion gain of 19dB while the NFssb is lower than 13dB at 100kHz. The VCO is based on a new topology which allows generating differential push-push outputs. It shows a tuning range larger than 8GHz. The phase noise is −74dBc/Hz at 100kHz offset. The output power is 9dBm. At a 3.3V supply, the chip consumes 533mA.
我们提出了一种采用200GHz fT SiGe BiCMOS技术设计的用于汽车雷达应用的77GHz四通道收发器。该芯片具有一个tx通道,一个1536的预分频器和三个rx通道。其中一个Rx是I/Q配置。rx通道显示典型的转换增益为19dB,而NFssb在100kHz时低于13dB。该VCO基于一种新的拓扑结构,可以产生差动推-推输出。它显示了大于8GHz的调谐范围。在100kHz偏移时,相位噪声为- 74dBc/Hz。输出功率为9dBm。在3.3V供电时,芯片消耗533mA。