Model Fitting Using Both TDR and Frequency Responses

R. Lane
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引用次数: 2

Abstract

Fitting a circuit model to measured data is usually accomplished by matching the model's calculated 'S' parameters to the target's 'S' parameters as measured on a VANA over the model's operating frequency range. For electrically " long" structures, several wavelengths long at the upper modelling frequency and poor starting values, the conventional technique leads to convergence difficulties. Using the IFT to effectively obtain the time domain step reflection response and matching this to the target's similarly transformed response, leads to better starting values and surer convergence. Examples are given, run on a low cost, commercially available circuit analysis program, of optimization using frequency domain only and time/frequency domain switching, for several simple networks. Some of the resolution limitations inherent in the method and choice of mode switching points are discussed.
使用TDR和频率响应的模型拟合
将电路模型拟合到测量数据通常是通过将模型计算的“S”参数与在模型工作频率范围内的VANA上测量的目标“S”参数相匹配来完成的。对于电“长”结构,在上建模频率处有几个波长长,启动值差,传统技术导致收敛困难。利用IFT有效地获得时域阶跃反射响应,并将其与目标的类似变换响应进行匹配,可以获得更好的起始值和更可靠的收敛性。在一个低成本的市售电路分析程序上,给出了几个简单网络仅使用频域和时频域切换进行优化的例子。讨论了该方法固有的分辨率限制和模式切换点的选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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