Radiation hard strip detectors on oxygenated silicon

Abstract

Recent results of the RD48 (ROSE) collaboration suggest the usage of oxygen enriched silicon for sensors operated in the harsh radiation environment of future high luminosity experiments. To investigate if the anticipated beneficial properties are still present after full processing of the wafers, strip detectors for the innermost ring of the ATLAS forward region have been fabricated on oxygen enriched silicon by CiS, Germany. These sensors, together with sensors on standard and thin substrates, have been exposed to 3/spl middot/10/sup 14/ 24 GeV/c protons/cm/sup 2/ at the CERN PS. We are presenting here the comparison between the sensors based on the CV measurements and the investigation of the charge collection efficiency obtained with a /sup 90/Sr source and the analogue readout chip SCT128A.