A 10V neuron stimulator in 0.18µm CMOS process with voltage clothing and folding voltage techniques

Lee Lin, Chien-Chih Chen, K. Tang
{"title":"A 10V neuron stimulator in 0.18µm CMOS process with voltage clothing and folding voltage techniques","authors":"Lee Lin, Chien-Chih Chen, K. Tang","doi":"10.1109/ISBB.2011.6107633","DOIUrl":null,"url":null,"abstract":"Biomedical implantable devices have drawn more and more attention in recent years. Extensive studies in neuroscience prove that neural stimulation techniques may cure or at least improve some diseases caused by neural abnormal discharge or disability. Two of the major challenges of implantable devices are combining a high-voltage driver and low-voltage digital control in a single chip, and accommodating large voltages in smaller feature size technology. This paper presents a new stimulator circuit structure to address these problems, using a novel folded voltage design to reduce the voltage supply from 20V to 10V, and a new floating voltage technique to solve the reliability issue. The proposed design has been fabricated and tested with TSMC 0.18µm 1P6M CMOS technology. 8000µA output current was delivered.","PeriodicalId":345164,"journal":{"name":"International Symposium on Bioelectronics and Bioinformations 2011","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Bioelectronics and Bioinformations 2011","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISBB.2011.6107633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Biomedical implantable devices have drawn more and more attention in recent years. Extensive studies in neuroscience prove that neural stimulation techniques may cure or at least improve some diseases caused by neural abnormal discharge or disability. Two of the major challenges of implantable devices are combining a high-voltage driver and low-voltage digital control in a single chip, and accommodating large voltages in smaller feature size technology. This paper presents a new stimulator circuit structure to address these problems, using a novel folded voltage design to reduce the voltage supply from 20V to 10V, and a new floating voltage technique to solve the reliability issue. The proposed design has been fabricated and tested with TSMC 0.18µm 1P6M CMOS technology. 8000µA output current was delivered.
一种10V神经元刺激器,采用0.18µm CMOS工艺,采用电压衣和折叠电压技术
生物医学植入式装置近年来受到越来越多的关注。神经科学的广泛研究证明,神经刺激技术可以治愈或至少改善一些由神经异常放电或残疾引起的疾病。植入式设备的两个主要挑战是在单个芯片中结合高压驱动器和低压数字控制,以及在较小的特征尺寸技术中适应大电压。本文提出了一种新的刺激电路结构来解决这些问题,采用新颖的折叠电压设计将供电电压从20V降低到10V,并采用新的浮动电压技术来解决可靠性问题。该设计已采用TSMC 0.18µm 1P6M CMOS技术进行了制造和测试。输出电流8000µA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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