Precise temperature control using reverse seebeck effect

S. Kodeeswaran, T. Ramkumar, R. Ganesh
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引用次数: 19

Abstract

It is an innovative concept, in which semiconductor element is used for thermal considerations. Thermoelectric material such as Bismuth and Tellurium is used to made semiconductor elements. This process is carried on the principle of reverse process of Seebeck effect. In this paper, the wall is constructed of using two semiconductor metal junctions. This wall automatically adopted with atmosphere based on the signal from temperature sensor. Thermal consideration process is achieved by reversing the current direction of power source. In versatile wall, a high power DC source is used to supply the power. In this paper the temperature range is maintained between 18°C to 45°C. This temperature control system consists of mode selection button, microcontroller, Optocoupler with relay, high amps DC source and Semiconductor element wall. By pressing mode button we can choose the required mode and that information is taken to microcontroller through port 1. The 12 V relay is connected in port 2 through Optocoupler in order to provide isolation between control and power side. There are two more relays we can change the current direction to bimetal semiconductor elements. For forward direction of current flow heating process is carried on. In same way cooling process is also carried on by changing the current in reverse direction. The bimetal semiconductors get power from external high amps powersource.
精确的温度控制采用反塞贝克效应
这是一个创新的概念,其中半导体元件用于热的考虑。像铋和碲这样的热电材料被用来制造半导体元件。该过程是根据塞贝克效应的逆向过程原理进行的。在本文中,墙是由两个半导体金属结构成的。该墙体根据温度传感器的信号自动调节气氛。热考虑过程是通过反转电源电流方向来实现的。在多功能墙中,采用大功率直流电源供电。在本文中,温度范围保持在18°C到45°C之间。该温度控制系统由模式选择按钮、单片机、带继电器的光耦合器、高安培直流电源和半导体元件墙组成。通过按下模式按钮,我们可以选择所需的模式,该信息通过端口1被带到微控制器。12v继电器通过光耦合器连接在端口2中,以便在控制端和电源端之间提供隔离。还有两个继电器,我们可以改变电流方向的双金属半导体元件。对正向流动的电流进行加热。以同样的方式,通过反向改变电流也可以进行冷却过程。双金属半导体由外部高安培电源供电。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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