A novel SOI lateral bipolar transistor with 30GHz f/sub max/ and 27V BV/sub CEO/ for RF power amplifier applications

Abstract

This paper describes a lateral bipolar transistor build on SOI substrate (ie. SOI-LBJT) for RF power amplifier applications. The lateral design concept significantly reduces parasitic resistances and capacitances, and enables very high operating frequency and good trade-off to breakdown voltages. This concept is validated by fabricated SOI-LBJT, which delivers frequency (f/sub t//f/sub max/ = 12/30GHz) and breakdown voltage (BV/sub CEO/=27 V) that approaches the Johnson's limit. This is the first reported Si-BJT that reaches Johnson's limit with BV/sub CEO/ above 10V.