A CMOS, self-biased charge amplifier

Proceedings of the Third International Workshop on Design of Mixed-Mode Integrated Circuits and Applications (Cat. No.99EX303) Pub Date : 1999-07-26 DOI:10.1109/MMICA.1999.833580

G. Amendola, Y. Blanchard, A. Exertier, S. Spirkovitch, G. Lu, G. Alquié

引用次数: 3

Abstract

In this article a charge amplifier dedicated to the signal processing of a capacitive silicon microphone is described. One feature of this amplifier is the implementation of a self-biased technique. It is a transconductance amplifier having a very high output resistance. The current consumption is quite low (20 /spl mu/A without the bias circuit) and the dimensions are 210 /spl mu/m by 170 /spl mu/m (including all capacitors). The amplifier has been designed and fabricated in 0.8 /spl mu/m CMOS technology. Both simulation and measurement results have shown the analog memorization of DC bias voltage.

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一种CMOS自偏置电荷放大器

本文介绍了一种用于电容式硅传声器信号处理的电荷放大器。该放大器的一个特点是实现了自偏置技术。它是一种具有非常高输出电阻的跨导放大器。电流消耗非常低(20 /spl mu/A，不带偏置电路)，尺寸为210 /spl mu/m × 170 /spl mu/m(包括所有电容器)。该放大器采用0.8 /spl mu/m CMOS工艺设计制作。仿真和测量结果表明，该方法对直流偏置电压具有模拟记忆能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the Third International Workshop on Design of Mixed-Mode Integrated Circuits and Applications (Cat. No.99EX303)

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