OMVPE GaInAsP/InP crystal growth for integrated optics

Abstract

The GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is one of the key techniques for development of semiconductor integrated optics for the wavelength range of 1.1-1.7μm, where integrated lasers [1] as well as quantum well structure devices [2] can be integrated. Although there have been reports on GaInAsP/InP OMVPE [3],[4], the growth condition in relations with sharp hetero-interface and p-type dopant are not clear.