On-chip reference oscillators with process, supply voltage and temperature compensation

C. Tsai, Wan-Jing Li, Peng-Yu Chen, Ying-Zu Lin, Soon-Jyh Chang
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引用次数: 11

Abstract

Here we present the design and implementation of a 130-MHz on-chip reference oscillator in a 0.18-µm 1-ploy 6-metal digital CMOS process. To compensate for the influences on the oscillation frequency by process, supply voltage and temperature (PVT) variations, the oscillator uses a bias adjustment technique without BJT devices, on-chip inductors or external components. Measurements of 8 samples in the 0 to 100°C temperature range indicate an average deviation of ±4.99% in the oscillation frequency. The process-induced frequency deviation is ±1.13% across chips at room temperature. The deviation of frequency with 10% supply voltage variation is within ±5.4%.
片上参考振荡器,具有过程、电源电压和温度补偿
在这里,我们提出了一个130 mhz片上参考振荡器的0.18µm 1层6金属数字CMOS工艺的设计和实现。为了补偿工艺、电源电压和温度(PVT)变化对振荡频率的影响,振荡器采用了不含BJT器件、片上电感或外部元件的偏置调整技术。在0至100°C温度范围内对8个样品的测量表明,振荡频率的平均偏差为±4.99%。在室温下,制程引起的频率偏差为±1.13%。电压变化10%时,频率偏差在±5.4%以内。
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