The wide and the narrow: DARPA/MTO programs for RF applications in wide bandgap and antimonide-based semiconductors

Abstract

This paper discusses two DARPA/MTO III-V semiconductor material development programs, the wide bandgap semiconductor for RF applications (WBGS-RF) program and the antimonide-based compound semiconductor (ABCS) program. For WBGS-RF, results are detailed from the recently-completed phase I effort with a focus on semi-insulating substrates and epitaxial growth. Also detailed are the goals and early progress report from phase II of WBGS-RF. Near the end, summarized are results achieved in the recently-completed ABCS program.