Response of silicon diodes for synchrotron radiation

I. Anokhin, M. Lerch, M. Petasecca, A. Rosenfeld, O. Zinets
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Abstract

Because of very high intensity and pulsed nature of synchrotron radiation the nonlinear effects in recombination-generation kinetics must be taken into account in the response of silicon diodes under irradiation. Dependences of the charge carrier lifetime and the ambipolar diffusion coefficient on the excess carrier density generated by the synchrotron radiation have been considered. Response of silicon diodes on photons from synchrotron sources with energy 20-100 keV has been calculated using the Shockley-Reed recombination statistics. Diffusion equation with time-dependent generation functions has been solved numerically for various intensity of the photon beam and parameters of diodes (diodes design and characteristics of impurity centers). Optimal choice of parameters of diodes for the short-cut current and the photovoltaic operation mode are discussed. Dependencies of responses on the generation rate can be converted into the dose rate responses of diodes by calculating the energy deposition in silicon. At very high beam intensity (the excess minority carrier density is much larger than the density of the majority charge carriers), the Shockley-Reed recombination model would be invalid and the Auger recombination becomes dominant. To explain experimental data on the dose rate response it is needed to use a correct function of the excess carrier lifetime versus the carrier density.
硅二极管对同步辐射的响应
由于同步辐射的高强度和脉冲特性,硅二极管在辐照下的响应必须考虑到重组产生动力学中的非线性效应。考虑了同步辐射产生的多余载流子密度对载流子寿命和双极性扩散系数的影响。利用肖克利-里德复合统计计算了硅二极管对能量为20-100 keV的同步加速器源光子的响应。对不同光子强度和二极管参数(二极管设计和杂质中心特征)的扩散方程进行了数值求解。讨论了短路电流下二极管参数的最佳选择和光伏工作方式。通过计算硅中的能量沉积,可以将响应对产生速率的依赖关系转换为二极管的剂量率响应。在非常高的束流强度下(过量的少数载流子密度远大于多数载流子密度),肖克利-里德复合模型将失效,俄歇复合成为主导。为了解释剂量率响应的实验数据,需要使用过量载流子寿命对载流子密度的正确函数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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