Low Temperature Rectifying Junctions for Crossbar Non-Volatile Memory Devices

2009 IEEE International Memory Workshop Pub Date : 2009-05-10 DOI:10.1109/IMW.2009.5090598

G. Tallarida, N. Huby, B. Kutrzeba-Kotowska, Sabina Spiga, M. Arcari, Gyorgy Csaba, Paolo Lugli, A. Redaelli, R. Bez

引用次数: 29

Abstract

ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 10 7 and forward current density as high as 10 4 A/cm 2 are reported. Results of the integration with NiO based switching memory elements are also shown.

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交叉棒非易失性存储器件的低温整流结

提出了在低温下制备zno基肖特基结作为跨栅非易失性存储器件的选择器。据报道，整流比超过10.7，正向电流密度高达10.4 A/ cm2。并给出了与NiO开关存储元件集成的结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2009 IEEE International Memory Workshop

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